SIS698DN-T1-GE3
Transistors - FETs, MOSFETs - Single
- Manufacturer No:
- SIS698DN-T1-GE3
- Manufacture:
- Vishay / Siliconix
- Package:
- PowerPAK® 1212-8
- Datasheet:
- SIS698DN-T1-GE3
- Description:
- MOSFET N-CH 100V 6.9A 1212-8
In Stock
0 pcs On sales
$0.29
Product Parameter
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® 1212-8
- Vgs(th) (Max) @ Id
- 3.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 195mOhm @ 2.5A, 10V
- Series
- -
- Power Dissipation (Max)
- 19.8W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PowerPAK® 1212-8
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 8nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 210pF @ 50V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 6.9A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
Company Profile
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