SIS606BDN-T1-GE3

Transistors - FETs, MOSFETs - Single

Manufacturer No:
SIS606BDN-T1-GE3
Manufacture:
Vishay / Siliconix
Package:
PowerPAK® 1212-8
Datasheet:
SIS606BDN-T1-GE3
Description:
MOSFET N-CHAN 100V POWERPAK 1212

In Stock

6000 pcs On sales

$1.46

Product Parameter

Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Vgs(th) (Max) @ Id
4V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
17.4mOhm @ 10A, 10V
Series
TrenchFET® Gen IV
Power Dissipation (Max)
3.7W (Ta), 52W (Tc)
FET Type
N-Channel
Supplier Device Package
PowerPAK® 1212-8
Packaging
Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs
30nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
100V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
1470pF @ 50V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
9.4A (Ta), 35.3A (Tc)

Company Profile

Atlaschip is a globally authorized distributor of semiconductors and electronic components ,IC ,COF/ TAB ,Opencell for over 600 industry-leading manufacturer brands. a key resource for design engineers. We are guides innovation forward for the global leading technology manufacturers and service providers.

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