SIHD2N80AE-GE3
Transistors - FETs, MOSFETs - Single
- Manufacturer No:
- SIHD2N80AE-GE3
- Manufacture:
- Vishay / Siliconix
- Package:
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- SIHD2N80AE-GE3
- Description:
- MOSFET N-CH 800V 2.9A DPAK
In Stock
0 pcs On sales
$1.16
Product Parameter
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 2.9Ohm @ 500mA, 10V
- Power Dissipation (Max)
- 62.5W (Tc)
- Series
- E
- Supplier Device Package
- D-PAK (TO-252)
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 10.5nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 800V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 180pF @ 100V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 2.9A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 4V @ 250µA
Company Profile
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