SIHD12N50E-GE3
Transistors - FETs, MOSFETs - Single
- Manufacturer No:
- SIHD12N50E-GE3
- Manufacture:
- Vishay / Siliconix
- Package:
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- SIHD12N50E-GE3
- Description:
- MOSFET N-CHAN 500V DPAK
In Stock
5455 pcs On sales
$1.71
Product Parameter
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TA)
- Rds On (Max) @ Id, Vgs
- 380mOhm @ 6A, 10V
- Series
- E
- Power Dissipation (Max)
- 114W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- D-PAK (TO-252AA)
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 50nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 550V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 886pF @ 100V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 10.5A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
Company Profile
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