SIHD1K4N60E-GE3
Transistors - FETs, MOSFETs - Single
- Manufacturer No:
- SIHD1K4N60E-GE3
- Manufacture:
- Vishay / Siliconix
- Package:
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- SIHD1K4N60E-GE3
- Description:
- MOSFET N-CH DPAK TO-252
In Stock
3015 pcs On sales
$1.11
Product Parameter
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.45Ohm @ 500mA, 10V
- Series
- E
- Power Dissipation (Max)
- 63W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-252AA
- Packaging
- Bulk
- Gate Charge (Qg) (Max) @ Vgs
- 7.5nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 600V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 172pF @ 100V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 4.2A (Tc)
Company Profile
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