TP65H070LSG
Transistors - FETs, MOSFETs - Single
- Manufacturer No:
- TP65H070LSG
- Manufacture:
- Transphorm
- Package:
- 3-PowerDFN
- Datasheet:
- TP65H070LSG
- Description:
- 650 V 25 A GAN FET
In Stock
290 pcs On sales
$11.8
Product Parameter
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 9.3nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 650V
- Technology
- GaNFET (Gallium Nitride)
- Input Capacitance (Ciss) (Max) @ Vds
- 600pF @ 400V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 25A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- 3-PowerDFN
- Vgs(th) (Max) @ Id
- 4.8V @ 700µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 85mOhm @ 16A, 10V
- Power Dissipation (Max)
- 96W (Tc)
- Series
- TP65H070L
- Supplier Device Package
- 3-PQFN (8x8)
Company Profile
Atlaschip is a globally authorized distributor of semiconductors and electronic components ,IC ,COF/ TAB ,Opencell for over 600 industry-leading manufacturer brands. a key resource for design engineers. We are guides innovation forward for the global leading technology manufacturers and service providers.
TP65H070LSG Relevant information
TP65H035WS
GANFET N-CH 650V 46.5A TO247-3
TP65H035WSQA
GANFET N-CH 650V 47A TO247-3
TP65H050WS
GANFET N-CH 650V 34A TO247-3
TP65H070LDG
650 V 25 A GAN FET
TP65H070LSG
650 V 25 A GAN FET