TP65H070LDG

Transistors - FETs, MOSFETs - Single

Manufacturer No:
TP65H070LDG
Manufacture:
Transphorm
Package:
3-PowerDFN
Datasheet:
TP65H070LDG
Description:
650 V 25 A GAN FET

In Stock

235 pcs On sales

$11.8

Product Parameter

Technology
GaNFET (Gallium Nitride)
Input Capacitance (Ciss) (Max) @ Vds
600pF @ 400V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
25A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Surface Mount
Package / Case
3-PowerDFN
Vgs(th) (Max) @ Id
4.8V @ 700µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
85mOhm @ 16A, 10V
Series
TP65H070L
Power Dissipation (Max)
96W (Tc)
FET Type
N-Channel
Supplier Device Package
3-PQFN (8x8)
Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
9.3nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
650V

Company Profile

Atlaschip is a globally authorized distributor of semiconductors and electronic components ,IC ,COF/ TAB ,Opencell for over 600 industry-leading manufacturer brands. a key resource for design engineers. We are guides innovation forward for the global leading technology manufacturers and service providers.

TP65H070LDG Relevant information

TP65H035WS
TP65H035WS

GANFET N-CH 650V 46.5A TO247-3

TP65H035WSQA
TP65H035WSQA

GANFET N-CH 650V 47A TO247-3

TP65H050WS
TP65H050WS

GANFET N-CH 650V 34A TO247-3

TP65H070LDG
TP65H070LDG

650 V 25 A GAN FET

TP65H070LSG
TP65H070LSG

650 V 25 A GAN FET