SQUN702E-T1_GE3

Transistors - FETs, MOSFETs - Arrays

Manufacturer No:
SQUN702E-T1_GE3
Manufacture:
Vishay / Siliconix
Package:
Die
Datasheet:
SQUN702E-T1_GE3
Description:
MOSFET N&P-CH COMMON DRAIN

In Stock

150 pcs On sales

$0

Product Parameter

FET Type
N and P-Channel, Common Drain
Drain to Source Voltage (Vdss)
40V, 200V
Packaging
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds
1474pF, 1450pF, 1302pF @ 20V, 100V
FET Feature
Standard
Current - Continuous Drain (Id) @ 25°C
30A (Tc), 20A (Tc)
Part Status
Active
Power - Max
48W (Tc), 60W (Tc)
Mounting Type
Surface Mount, Wettable Flank
Package / Case
Die
Vgs(th) (Max) @ Id
2.5V @ 250µA, 3.5V @ 250µA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
Supplier Device Package
Die
Series
Automotive, AEC-Q101, TrenchFET®
Gate Charge (Qg) (Max) @ Vgs
23nC, 14nC, 30.2nC @ 10V

Company Profile

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SQUN702E-T1_GE3 Relevant information

SQUN702E-T1_GE3
SQUN702E-T1_GE3

MOSFET N&P-CH COMMON DRAIN