SQS966ENW-T1_GE3
Transistors - FETs, MOSFETs - Arrays
- Manufacturer No:
- SQS966ENW-T1_GE3
- Manufacture:
- Vishay / Siliconix
- Package:
- PowerPAK® 1212-8W Dual
- Datasheet:
- SQS966ENW-T1_GE3
- Description:
- MOSFET N-CHAN 60V
In Stock
0 pcs On sales
$0.34
Product Parameter
- Supplier Device Package
- PowerPAK® 1212-8W Dual
- Series
- Automotive, AEC-Q101, TrenchFET®
- Gate Charge (Qg) (Max) @ Vgs
- 8.8nC @ 10V
- FET Type
- 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss)
- 60V
- Packaging
- Tape & Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds
- 572pF @ 25V
- FET Feature
- Standard
- Current - Continuous Drain (Id) @ 25°C
- 6A (Tc)
- Part Status
- Active
- Power - Max
- 27.8W (Tc)
- Mounting Type
- Surface Mount, Wettable Flank
- Package / Case
- PowerPAK® 1212-8W Dual
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 36mOhm @ 1.25A, 10V
Company Profile
Atlaschip is a globally authorized distributor of semiconductors and electronic components ,IC ,COF/ TAB ,Opencell for over 600 industry-leading manufacturer brands. a key resource for design engineers. We are guides innovation forward for the global leading technology manufacturers and service providers.
SQS966ENW-T1_GE3 Relevant information
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SQS966ENW-T1_GE3
MOSFET N-CHAN 60V