SIHU4N80E-GE3

Transistors - FETs, MOSFETs - Single

Manufacturer No:
SIHU4N80E-GE3
Manufacture:
Vishay / Siliconix
Package:
TO-251-3 Long Leads, IPak, TO-251AB
Datasheet:
SIHU4N80E-GE3
Description:
MOSFET N-CHAN 800V TO-251

In Stock

3000 pcs On sales

$1.86

Product Parameter

Series
E
Power Dissipation (Max)
69W (Tc)
FET Type
N-Channel
Supplier Device Package
IPAK (TO-251)
Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
32nC @ 10V
Vgs (Max)
±30V
Drain to Source Voltage (Vdss)
800V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
622pF @ 100V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
4.3A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Through Hole
Package / Case
TO-251-3 Long Leads, IPak, TO-251AB
Vgs(th) (Max) @ Id
4V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
1.27Ohm @ 2A, 10V

Company Profile

Atlaschip is a globally authorized distributor of semiconductors and electronic components ,IC ,COF/ TAB ,Opencell for over 600 industry-leading manufacturer brands. a key resource for design engineers. We are guides innovation forward for the global leading technology manufacturers and service providers.

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