SI8900EDB-T2-E1
Transistors - FETs, MOSFETs - Arrays
- Manufacturer No:
- SI8900EDB-T2-E1
- Manufacture:
- Vishay / Siliconix
- Package:
- 10-UFBGA, CSPBGA
- Datasheet:
- SI8900EDB-T2-E1
- Description:
- MOSFET 2N-CH 20V 5.4A 10-MFP
In Stock
0 pcs On sales
$1.46
Product Parameter
- Packaging
- Tape & Reel (TR)
- Drain to Source Voltage (Vdss)
- 20V
- FET Feature
- Logic Level Gate
- Input Capacitance (Ciss) (Max) @ Vds
- -
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 5.4A
- Power - Max
- 1W
- Mounting Type
- Surface Mount
- Package / Case
- 10-UFBGA, CSPBGA
- Base Part Number
- SI8900
- Vgs(th) (Max) @ Id
- 1V @ 1.1mA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- -
- Series
- TrenchFET®
- Supplier Device Package
- 10-Micro Foot™ CSP (2x5)
- FET Type
- 2 N-Channel (Dual) Common Drain
- Gate Charge (Qg) (Max) @ Vgs
- -
Company Profile
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