SI5402BDC-T1-E3

Transistors - FETs, MOSFETs - Single

Manufacturer No:
SI5402BDC-T1-E3
Manufacture:
Vishay / Siliconix
Package:
8-SMD, Flat Lead
Datasheet:
SI5402BDC-T1-E3
Description:
MOSFET N-CH 30V 4.9A 1206-8

In Stock

0 pcs On sales

$0

Product Parameter

Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
35mOhm @ 4.9A, 10V
Series
TrenchFET®
Power Dissipation (Max)
1.3W (Ta)
FET Type
N-Channel
Supplier Device Package
1206-8 ChipFET™
Packaging
Digi-Reel®
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
30V
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
4.9A (Ta)
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Part Status
Obsolete
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Lead
Vgs(th) (Max) @ Id
3V @ 250µA

Company Profile

Atlaschip is a globally authorized distributor of semiconductors and electronic components ,IC ,COF/ TAB ,Opencell for over 600 industry-leading manufacturer brands. a key resource for design engineers. We are guides innovation forward for the global leading technology manufacturers and service providers.

SI5402BDC-T1-E3 Relevant information

SI5401DC-T1-E3
SI5401DC-T1-E3

MOSFET P-CH 20V 5.2A 1206-8

SI5401DC-T1-GE3
SI5401DC-T1-GE3

MOSFET P-CH 20V 5.2A 1206-8

SI5402BDC-T1-E3
SI5402BDC-T1-E3

MOSFET N-CH 30V 4.9A 1206-8

SI5402BDC-T1-GE3
SI5402BDC-T1-GE3

MOSFET N-CH 30V 4.9A 1206-8

SI5402DC-T1-E3
SI5402DC-T1-E3

MOSFET N-CH 30V 4.9A 1206-8

SI5402DC-T1-GE3
SI5402DC-T1-GE3

MOSFET N-CH 30V 4.9A 1206-8