SI4900DY-T1-E3
Transistors - FETs, MOSFETs - Arrays
- Manufacturer No:
- SI4900DY-T1-E3
- Manufacture:
- Vishay / Siliconix
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
- SI4900DY-T1-E3
- Description:
- MOSFET 2N-CH 60V 5.3A 8-SOIC
In Stock
11224 pcs On sales
$0
Product Parameter
- Rds On (Max) @ Id, Vgs
- 58mOhm @ 4.3A, 10V
- Series
- TrenchFET®
- Supplier Device Package
- 8-SO
- FET Type
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs
- 20nC @ 10V
- Packaging
- Digi-Reel®
- Drain to Source Voltage (Vdss)
- 60V
- FET Feature
- Logic Level Gate
- Input Capacitance (Ciss) (Max) @ Vds
- 665pF @ 15V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 5.3A
- Power - Max
- 3.1W
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Base Part Number
- SI4900
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
Company Profile
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