SI4800BDY-T1-E3

Transistors - FETs, MOSFETs - Single

Manufacturer No:
SI4800BDY-T1-E3
Manufacture:
Vishay / Siliconix
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
SI4800BDY-T1-E3
Description:
MOSFET N-CH 30V 6.5A 8-SOIC

In Stock

1877 pcs On sales

$0

Product Parameter

Packaging
Digi-Reel®
Gate Charge (Qg) (Max) @ Vgs
13nC @ 5V
Vgs (Max)
±25V
Drain to Source Voltage (Vdss)
30V
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
6.5A (Ta)
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Part Status
Active
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Vgs(th) (Max) @ Id
1.8V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
18.5mOhm @ 9A, 10V
Series
TrenchFET®
Power Dissipation (Max)
1.3W (Ta)
FET Type
N-Channel
Supplier Device Package
8-SO

Company Profile

Atlaschip is a globally authorized distributor of semiconductors and electronic components ,IC ,COF/ TAB ,Opencell for over 600 industry-leading manufacturer brands. a key resource for design engineers. We are guides innovation forward for the global leading technology manufacturers and service providers.

SI4800BDY-T1-E3 Relevant information

SI4800BDY-T1-E3
SI4800BDY-T1-E3

MOSFET N-CH 30V 6.5A 8-SOIC

SI4800BDY-T1-GE3
SI4800BDY-T1-GE3

MOSFET N-CH 30V 6.5A 8-SOIC

SI4804BDY-T1-E3
SI4804BDY-T1-E3

MOSFET 2N-CH 30V 5.7A 8-SOIC

SI4804BDY-T1-GE3
SI4804BDY-T1-GE3

MOSFET 2N-CH 30V 5.7A 8SOIC

SI4804CDY-T1-E3
SI4804CDY-T1-E3

MOSFET 2N-CH 30V 8A 8SO

SI4804CDY-T1-GE3
SI4804CDY-T1-GE3

MOSFET 2N-CH 30V 8A 8SOIC