SI4200DY-T1-GE3
Transistors - FETs, MOSFETs - Arrays
- Manufacturer No:
- SI4200DY-T1-GE3
- Manufacture:
- Vishay / Siliconix
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
- SI4200DY-T1-GE3
- Description:
- MOSFET 2N-CH 25V 8A 8SOIC
In Stock
2500 pcs On sales
$0
Product Parameter
- FET Feature
- Logic Level Gate
- Current - Continuous Drain (Id) @ 25°C
- 8A
- Part Status
- Obsolete
- Power - Max
- 2.8W
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Vgs(th) (Max) @ Id
- 2.2V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 25mOhm @ 7.3A, 10V
- Supplier Device Package
- 8-SO
- Series
- TrenchFET®
- Gate Charge (Qg) (Max) @ Vgs
- 12nC @ 10V
- FET Type
- 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss)
- 25V
- Packaging
- Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 415pF @ 13V
Company Profile
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