SI4196DY-T1-GE3
Transistors - FETs, MOSFETs - Single
- Manufacturer No:
- SI4196DY-T1-GE3
- Manufacture:
- Vishay / Siliconix
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
- SI4196DY-T1-GE3
- Description:
- MOSFET N-CH 20V 8A 8SOIC
In Stock
0 pcs On sales
$0.27
Product Parameter
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 830pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 8A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 27mOhm @ 8A, 4.5V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 2W (Ta), 4.6W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- 8-SO
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 22nC @ 8V
- Vgs (Max)
- ±8V
- Drain to Source Voltage (Vdss)
- 20V
Company Profile
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