SI4102DY-T1-GE3

Transistors - FETs, MOSFETs - Single

Manufacturer No:
SI4102DY-T1-GE3
Manufacture:
Vishay / Siliconix
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
SI4102DY-T1-GE3
Description:
MOSFET N-CH 100V 3.8A 8-SOIC

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Product Parameter

FET Type
N-Channel
Supplier Device Package
8-SO
Packaging
Digi-Reel®
Gate Charge (Qg) (Max) @ Vgs
11nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
100V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
370pF @ 50V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
3.8A (Tc)
Part Status
Obsolete
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Vgs(th) (Max) @ Id
4V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
158mOhm @ 2.7A, 10V
Series
TrenchFET®
Power Dissipation (Max)
2.4W (Ta), 4.8W (Tc)

Company Profile

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