SI3900DV-T1-GE3
Transistors - FETs, MOSFETs - Arrays
- Manufacturer No:
- SI3900DV-T1-GE3
- Manufacture:
- Vishay / Siliconix
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
- SI3900DV-T1-GE3
- Description:
- MOSFET 2N-CH 20V 2A 6-TSOP
In Stock
5957 pcs On sales
$0
Product Parameter
- Rds On (Max) @ Id, Vgs
- 125mOhm @ 2.4A, 4.5V
- Series
- TrenchFET®
- Supplier Device Package
- 6-TSOP
- FET Type
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs
- 4nC @ 4.5V
- Packaging
- Digi-Reel®
- Drain to Source Voltage (Vdss)
- 20V
- FET Feature
- Logic Level Gate
- Input Capacitance (Ciss) (Max) @ Vds
- -
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 2A
- Power - Max
- 830mW
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Base Part Number
- SI3900
- Vgs(th) (Max) @ Id
- 1.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
Company Profile
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SI3900DV-T1-GE3 Relevant information
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MOSFET 2N-CH 20V 2A 6-TSOP
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