SI3812DV-T1-GE3

Transistors - FETs, MOSFETs - Single

Manufacturer No:
SI3812DV-T1-GE3
Manufacture:
Vishay / Siliconix
Package:
SOT-23-6 Thin, TSOT-23-6
Datasheet:
SI3812DV-T1-GE3
Description:
MOSFET N-CH 20V 2A 6-TSOP

In Stock

0 pcs On sales

$0

Product Parameter

FET Feature
Schottky Diode (Isolated)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Part Status
Obsolete
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ Id
600mV @ 250µA (Min)
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
125mOhm @ 2.4A, 4.5V
Series
LITTLE FOOT®
Power Dissipation (Max)
830mW (Ta)
FET Type
N-Channel
Supplier Device Package
6-TSOP
Packaging
Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs
4nC @ 4.5V
Vgs (Max)
±12V
Drain to Source Voltage (Vdss)
20V
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
2A (Ta)

Company Profile

Atlaschip is a globally authorized distributor of semiconductors and electronic components ,IC ,COF/ TAB ,Opencell for over 600 industry-leading manufacturer brands. a key resource for design engineers. We are guides innovation forward for the global leading technology manufacturers and service providers.

SI3812DV-T1-GE3 Relevant information

SI3805DV-T1-E3
SI3805DV-T1-E3

MOSFET P-CH 20V 3.3A 6-TSOP

SI3805DV-T1-GE3
SI3805DV-T1-GE3

MOSFET P-CH 20V 3.3A 6-TSOP

SI3812DV-T1-E3
SI3812DV-T1-E3

MOSFET N-CH 20V 2A 6-TSOP

SI3812DV-T1-GE3
SI3812DV-T1-GE3

MOSFET N-CH 20V 2A 6-TSOP

SI3831DV-T1-E3
SI3831DV-T1-E3

IC PWR SW BI-DIR PCHAN 6TSOP

SI3831DV-T1-GE3
SI3831DV-T1-GE3

IC PWR SW BI-DIR PCHAN 6TSOP