SI3529DV-T1-GE3
Transistors - FETs, MOSFETs - Arrays
- Manufacturer No:
- SI3529DV-T1-GE3
- Manufacture:
- Vishay / Siliconix
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
- SI3529DV-T1-GE3
- Description:
- MOSFET N/P-CH 40V 2.5A 6-TSOP
In Stock
0 pcs On sales
$0
Product Parameter
- FET Feature
- Logic Level Gate
- Current - Continuous Drain (Id) @ 25°C
- 2.5A, 1.95A
- Part Status
- Obsolete
- Power - Max
- 1.4W
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 125mOhm @ 2.2A, 10V
- Supplier Device Package
- 6-TSOP
- Series
- TrenchFET®
- Gate Charge (Qg) (Max) @ Vgs
- 7nC @ 10V
- FET Type
- N and P-Channel
- Drain to Source Voltage (Vdss)
- 40V
- Packaging
- Tape & Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds
- 205pF @ 20V
Company Profile
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