SI2308BDS-T1-E3
Transistors - FETs, MOSFETs - Single
- Manufacturer No:
- SI2308BDS-T1-E3
- Manufacture:
- Vishay / Siliconix
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
- SI2308BDS-T1-E3
- Description:
- MOSFET N-CH 60V 2.3A SOT23-3
In Stock
56260 pcs On sales
$0
Product Parameter
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 156mOhm @ 1.9A, 10V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 1.09W (Ta), 1.66W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- SOT-23-3 (TO-236)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 6.8nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 190pF @ 30V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 2.3A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
Company Profile
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