SI2300DS-T1-GE3
Transistors - FETs, MOSFETs - Single
- Manufacturer No:
- SI2300DS-T1-GE3
- Manufacture:
- Vishay / Siliconix
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
- SI2300DS-T1-GE3
- Description:
- MOSFET N-CH 30V 3.6A SOT-23
In Stock
80090 pcs On sales
$0
Product Parameter
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 3.6A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Vgs(th) (Max) @ Id
- 1.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 68mOhm @ 2.9A, 4.5V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 1.1W (Ta), 1.7W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- SOT-23-3 (TO-236)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 10nC @ 10V
- Vgs (Max)
- ±12V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 320pF @ 15V
Company Profile
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SI2300DS-T1-GE3 Relevant information
SI2300-TP
N-CHANNEL,MOSFETS,SOT-23 PACKAGE
SI2300DS-T1-GE3
MOSFET N-CH 30V 3.6A SOT-23
SI2301-TP
MOSFET P-CH 20V 2.8A SOT-23
SI2301A-TP
P-CHANNEL,MOSFETS,SOT-23 PACKAGE
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