IRLD110
Transistors - FETs, MOSFETs - Single
- Manufacturer No:
- IRLD110
- Manufacture:
- Vishay / Siliconix
- Package:
- 4-DIP (0.300", 7.62mm)
- Datasheet:
- IRLD110
- Description:
- MOSFET N-CH 100V 1A 4-DIP
In Stock
0 pcs On sales
$0
Product Parameter
- Vgs(th) (Max) @ Id
- 2V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 540mOhm @ 600mA, 5V
- Series
- -
- Power Dissipation (Max)
- 1.3W (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- 4-DIP, Hexdip, HVMDIP
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 6.1nC @ 5V
- Vgs (Max)
- ±10V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 250pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 1A (Ta)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 4V, 5V
- Mounting Type
- Through Hole
- Package / Case
- 4-DIP (0.300", 7.62mm)
Company Profile
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