TPW1R306PL,L1Q

Transistors - FETs, MOSFETs - Single

Manufacturer No:
TPW1R306PL,L1Q
Manufacture:
Toshiba Semiconductor and Storage
Package:
8-PowerVDFN
Datasheet:
TPW1R306PL,L1Q
Description:
X35 PB-F POWER MOSFET TRANSISTOR

In Stock

10079 pcs On sales

$0

Product Parameter

FET Feature
-
Current - Continuous Drain (Id) @ 25°C
260A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Vgs(th) (Max) @ Id
2.5V @ 1mA
Operating Temperature
175°C
Rds On (Max) @ Id, Vgs
1.29mOhm @ 50A, 10V
Series
U-MOSIX-H
Power Dissipation (Max)
960mW (Ta), 170W (Tc)
FET Type
N-Channel
Supplier Device Package
8-DSOP Advance
Packaging
Digi-Reel®
Gate Charge (Qg) (Max) @ Vgs
91nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
60V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
8100pF @ 30V

Company Profile

Atlaschip is a globally authorized distributor of semiconductors and electronic components ,IC ,COF/ TAB ,Opencell for over 600 industry-leading manufacturer brands. a key resource for design engineers. We are guides innovation forward for the global leading technology manufacturers and service providers.

TPW1R306PL,L1Q Relevant information

TPW1R005PL,L1Q
TPW1R005PL,L1Q

X35 PB-F POWER MOSFET TRANSISTOR

TPW1R306PL,L1Q
TPW1R306PL,L1Q

X35 PB-F POWER MOSFET TRANSISTOR