TK70D06J1(Q)

Transistors - FETs, MOSFETs - Single

Manufacturer No:
TK70D06J1(Q)
Manufacture:
Toshiba Semiconductor and Storage
Package:
TO-220-3
Datasheet:
TK70D06J1(Q)
Description:
MOSFET N-CH 60V 70A TO220W

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Product Parameter

Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
87nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
60V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
5450pF @ 10V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
70A (Ta)
Part Status
Obsolete
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Mounting Type
Through Hole
Package / Case
TO-220-3
Vgs(th) (Max) @ Id
2.3V @ 1mA
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
6.4mOhm @ 35A, 10V
Series
-
Power Dissipation (Max)
45W (Tc)
FET Type
N-Channel
Supplier Device Package
TO-220(W)

Company Profile

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TK70D06J1(Q) Relevant information

TK70D06J1(Q)
TK70D06J1(Q)

MOSFET N-CH 60V 70A TO220W