TK55S10N1,LQ

Transistors - FETs, MOSFETs - Single

Manufacturer No:: TK55S10N1,LQ
Manufacture:: Toshiba Semiconductor and Storage
Package:: TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet:: TK55S10N1,LQ
Description:: MOSFET N-CH 100V 55A DPAK

In Stock

2706 pcs On sales

Product Parameter

FET Feature: -

Current - Continuous Drain (Id) @ 25°C: 55A (Ta)

Part Status: Active

Drive Voltage (Max Rds On, Min Rds On): 10V

Mounting Type: Surface Mount

Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id: 4V @ 500µA

Operating Temperature: 175°C (TJ)

Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V

Series: U-MOSVIII-H

Power Dissipation (Max): 157W (Tc)

FET Type: N-Channel

Supplier Device Package: DPAK+

Packaging: Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V

Vgs (Max): ±20V

Drain to Source Voltage (Vdss): 100V

Technology: MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds: 3280pF @ 10V

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