TK32E12N1,S1X

Transistors - FETs, MOSFETs - Single

Manufacturer No:
TK32E12N1,S1X
Manufacture:
Toshiba Semiconductor and Storage
Package:
TO-220-3
Datasheet:
TK32E12N1,S1X
Description:
MOSFET N CH 120V 60A TO-220

In Stock

250 pcs On sales

$1.33

Product Parameter

Mounting Type
Through Hole
Package / Case
TO-220-3
Vgs(th) (Max) @ Id
4V @ 500µA
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
13.8mOhm @ 16A, 10V
Series
U-MOSVIII-H
Power Dissipation (Max)
98W (Tc)
FET Type
N-Channel
Supplier Device Package
TO-220
Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
34nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
120V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
2000pF @ 60V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V

Company Profile

Atlaschip is a globally authorized distributor of semiconductors and electronic components ,IC ,COF/ TAB ,Opencell for over 600 industry-leading manufacturer brands. a key resource for design engineers. We are guides innovation forward for the global leading technology manufacturers and service providers.

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MOSFET N CH 120V 60A TO-220