RN2606(TE85L,F)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Manufacturer No:
- RN2606(TE85L,F)
- Manufacture:
- Toshiba Semiconductor and Storage
- Package:
- SC-74, SOT-457
- Datasheet:
- RN2606(TE85L,F)
- Description:
- TRANS 2PNP PREBIAS 0.3W SM6
In Stock
1030 pcs On sales
$0
Product Parameter
- Supplier Device Package
- SM6
- Resistor - Emitter Base (R2)
- 47kOhms
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 250µA, 5mA
- Series
- -
- Current - Collector (Ic) (Max)
- 100mA
- Packaging
- Digi-Reel®
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Part Status
- Active
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 80 @ 10mA, 5V
- Power - Max
- 300mW
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Mounting Type
- Surface Mount
- Package / Case
- SC-74, SOT-457
- Transistor Type
- 2 PNP - Pre-Biased (Dual)
- Resistor - Base (R1)
- 4.7kOhms
- Frequency - Transition
- 200MHz
Company Profile
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