RN2302,LF

Transistors - Bipolar (BJT) - Single, Pre-Biased

Manufacturer No:
RN2302,LF
Manufacture:
Toshiba Semiconductor and Storage
Package:
SC-70, SOT-323
Datasheet:
RN2302,LF
Description:
X34 PB-F USM TRANSISTOR PD 100MW

In Stock

0 pcs On sales

$0.04

Product Parameter

Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector (Ic) (Max)
100mA
Series
-
Current - Collector Cutoff (Max)
500nA
Part Status
Active
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 10mA, 5V
Power - Max
100mW
Voltage - Collector Emitter Breakdown (Max)
50V
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Transistor Type
PNP - Pre-Biased
Resistor - Base (R1)
10 kOhms
Frequency - Transition
200MHz
Supplier Device Package
USM
Resistor - Emitter Base (R2)
10 kOhms

Company Profile

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