GT60N321(Q)

Transistors - IGBTs - Single

Manufacturer No:
GT60N321(Q)
Manufacture:
Toshiba Semiconductor and Storage
Package:
TO-3PL
Datasheet:
GT60N321(Q)
Description:
IGBT 1000V 60A 170W TO3P LH

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Product Parameter

Input Type
Standard
Reverse Recovery Time (trr)
2.5µs
Part Status
Obsolete
Current - Collector (Ic) (Max)
60A
Power - Max
170W
Current - Collector Pulsed (Icm)
120A
Mounting Type
Through Hole
Voltage - Collector Emitter Breakdown (Max)
1000V
Package / Case
TO-3PL
Test Condition
-
Base Part Number
GT60
Switching Energy
-
Td (on/off) @ 25°C
330ns/700ns
Series
-
Operating Temperature
150°C (TJ)
IGBT Type
-
Supplier Device Package
TO-3P(LH)
Packaging
Tube
Vce(on) (Max) @ Vge, Ic
2.8V @ 15V, 60A

Company Profile

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GT60N321(Q) Relevant information

GT60N321(Q)
GT60N321(Q)

IGBT 1000V 60A 170W TO3P LH