2SA1013-O,T6MIBF(J
Transistors - Bipolar (BJT) - Single
- Manufacturer No:
- 2SA1013-O,T6MIBF(J
- Manufacture:
- Toshiba Semiconductor and Storage
- Package:
- TO-226-3, TO-92-3 Long Body
- Datasheet:
- 2SA1013-O,T6MIBF(J
- Description:
- TRANS PNP 1A 160V TO226-3
In Stock
0 pcs On sales
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Product Parameter
- Packaging
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 60 @ 200mA, 5V
- Part Status
- Obsolete
- Voltage - Collector Emitter Breakdown (Max)
- 160V
- Power - Max
- 900mW
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Transistor Type
- PNP
- Operating Temperature
- 150°C (TJ)
- Frequency - Transition
- 50MHz
- Supplier Device Package
- TO-92L
- Vce Saturation (Max) @ Ib, Ic
- 1.5V @ 50mA, 500mA
- Current - Collector (Ic) (Max)
- 1A
- Series
- -
- Current - Collector Cutoff (Max)
- 1µA (ICBO)
Company Profile
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