ES1HL M2G

Diodes - Rectifiers - Single

Manufacturer No:
ES1HL M2G
Manufacture:
Taiwan Semiconductor Corporation
Package:
DO-219AB
Datasheet:
ES1HL M2G
Description:
DIODE GEN PURP 500V 1A SUB SMA

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Product Parameter

Supplier Device Package
Sub SMA
Reverse Recovery Time (trr)
35ns
Current - Reverse Leakage @ Vr
5µA @ 500V
Voltage - DC Reverse (Vr) (Max)
500V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io)
1A
Series
-
Operating Temperature - Junction
-55°C ~ 150°C
Packaging
Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If
1.7V @ 1A
Diode Type
Standard
Part Status
Active
Mounting Type
Surface Mount
Package / Case
DO-219AB
Capacitance @ Vr, F
8pF @ 1V, 1MHz

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ES1HL M2G
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DIODE GEN PURP 500V 1A SUB SMA