EMD4T2R
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Manufacturer No:
- EMD4T2R
- Manufacture:
- ROHM Semiconductor
- Package:
- SOT-563, SOT-666
- Datasheet:
- EMD4T2R
- Description:
- TRANS NPN/PNP PREBIAS 0.15W EMT6
In Stock
9204 pcs On sales
$0
Product Parameter
- Frequency - Transition
- 250MHz
- Supplier Device Package
- EMT6
- Resistor - Emitter Base (R2)
- 47kOhms
- Series
- -
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 500µA, 10mA / 300mV @ 250µA, 5mA
- Packaging
- Digi-Reel®
- Current - Collector (Ic) (Max)
- 100mA
- Part Status
- Active
- Current - Collector Cutoff (Max)
- 500nA
- Power - Max
- 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 68 @ 5mA, 5V
- Mounting Type
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Package / Case
- SOT-563, SOT-666
- Transistor Type
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Base Part Number
- *MD4
- Resistor - Base (R1)
- 47kOhms, 10kOhms
Company Profile
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EMD4T2R
TRANS NPN/PNP PREBIAS 0.15W EMT6