EMD30T2R

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Manufacturer No:
EMD30T2R
Manufacture:
ROHM Semiconductor
Package:
SOT-563, SOT-666
Datasheet:
EMD30T2R
Description:
TRANS NPN/PNP PREBIAS 0.15W EMT6

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Product Parameter

Mounting Type
Surface Mount
Voltage - Collector Emitter Breakdown (Max)
50V, 30V
Package / Case
SOT-563, SOT-666
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Base Part Number
*MD30
Resistor - Base (R1)
10kOhms, 1kOhms
Frequency - Transition
250MHz, 260MHz
Supplier Device Package
EMT6
Resistor - Emitter Base (R2)
10kOhms
Series
-
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 10mA / 300mV @ 2.5mA, 50mA
Packaging
Digi-Reel®
Current - Collector (Ic) (Max)
100mA, 200mA
Part Status
Discontinued at Digi-Key
Current - Collector Cutoff (Max)
500nA
Power - Max
150mW
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 5mA, 5V / 140 @ 100mA, 2V

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