RJM0603JSC-00#13

Transistors - FETs, MOSFETs - Arrays

Manufacturer No:
RJM0603JSC-00#13
Manufacture:
Renesas Electronics America
Package:
20-SOIC (0.433", 11.00mm Width) Exposed Pad
Datasheet:
RJM0603JSC-00#13
Description:
MOSFET 3N/3P-CH 60V 20A HSOP

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Product Parameter

Supplier Device Package
20-HSOP
Series
Automotive, AEC-Q101
Gate Charge (Qg) (Max) @ Vgs
43nC @ 10V
FET Type
3 N and 3 P-Channel (3-Phase Bridge)
Drain to Source Voltage (Vdss)
60V
Packaging
-
Input Capacitance (Ciss) (Max) @ Vds
2600pF @ 10V
FET Feature
Logic Level Gate, 4.5V Drive
Current - Continuous Drain (Id) @ 25°C
20A
Part Status
Obsolete
Power - Max
54W
Mounting Type
Surface Mount
Package / Case
20-SOIC (0.433", 11.00mm Width) Exposed Pad
Vgs(th) (Max) @ Id
2.5V @ 1mA
Operating Temperature
175°C
Rds On (Max) @ Id, Vgs
20mOhm @ 10A, 10V

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RJM0603JSC-00#13 Relevant information

RJM0603JSC-00#12
RJM0603JSC-00#12

MOSFET 3N/3P-CH 60V 20A HSOP

RJM0603JSC-00#13
RJM0603JSC-00#13

MOSFET 3N/3P-CH 60V 20A HSOP