MJD112-1G

Transistors - Bipolar (BJT) - Single

Manufacturer No:
MJD112-1G
Manufacture:
ON Semiconductor
Package:
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet:
MJD112-1G
Description:
TRANS NPN DARL 100V 2A IPAK

In Stock

4392 pcs On sales

$0.68

Product Parameter

Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Transistor Type
NPN - Darlington
Base Part Number
MJD112
Operating Temperature
-65°C ~ 150°C (TJ)
Frequency - Transition
25MHz
Supplier Device Package
I-PAK
Vce Saturation (Max) @ Ib, Ic
3V @ 40mA, 4A
Series
-
Current - Collector (Ic) (Max)
2A
Packaging
Tube
Current - Collector Cutoff (Max)
20µA
Part Status
Active
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 2A, 3V
Power - Max
1.75W
Voltage - Collector Emitter Breakdown (Max)
100V
Mounting Type
Through Hole

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MJD112-1G Relevant information

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