PDTC114EMB,315

Transistors - Bipolar (BJT) - Single, Pre-Biased

Manufacturer No:
PDTC114EMB,315
Manufacture:
Nexperia USA Inc.
Package:
3-XFDFN
Datasheet:
PDTC114EMB,315
Description:
TRANS PREBIAS NPN 250MW 3DFN

In Stock

0 pcs On sales

$0.05

Product Parameter

Resistor - Base (R1)
10 kOhms
Frequency - Transition
230MHz
Supplier Device Package
DFN1006B-3
Resistor - Emitter Base (R2)
10 kOhms
Series
-
Vce Saturation (Max) @ Ib, Ic
150mV @ 500µA, 10mA
Packaging
Tape & Reel (TR)
Current - Collector (Ic) (Max)
100mA
Part Status
Active
Current - Collector Cutoff (Max)
1µA
Power - Max
250mW
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 5mA, 5V
Mounting Type
Surface Mount
Voltage - Collector Emitter Breakdown (Max)
50V
Package / Case
3-XFDFN
Transistor Type
NPN - Pre-Biased
Base Part Number
PDTC114

Company Profile

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