2N5012S
Transistors - Bipolar (BJT) - Single
- Manufacturer No:
- 2N5012S
- Manufacture:
- Microsemi Corporation
- Package:
- TO-205AD, TO-39-3 Metal Can
- Datasheet:
- 2N5012S
- Description:
- TRANSISTOR NPN TO-39
In Stock
0 pcs On sales
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Product Parameter
- Supplier Device Package
- TO-39 (TO-205AD)
- Vce Saturation (Max) @ Ib, Ic
- 1.6V @ 5mA, 25mA
- Current - Collector (Ic) (Max)
- 200mA
- Series
- Military, MIL-PRF-19500/727
- Current - Collector Cutoff (Max)
- 10nA (ICBO)
- Packaging
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 30 @ 25mA, 10V
- Part Status
- Obsolete
- Voltage - Collector Emitter Breakdown (Max)
- 700V
- Power - Max
- 1W
- Mounting Type
- Through Hole
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Transistor Type
- NPN
- Operating Temperature
- -65°C ~ 200°C (TJ)
- Frequency - Transition
- -
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