IXFM35N30
Transistors - FETs, MOSFETs - Single
- Manufacturer No:
- IXFM35N30
- Manufacture:
- IXYS
- Package:
- TO-204AE
- Datasheet:
- IXFM35N30
- Description:
- POWER MOSFET TO-3
In Stock
0 pcs On sales
$0
Product Parameter
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 300V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 4800pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 35A (Tc)
- Part Status
- Last Time Buy
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-204AE
- Vgs(th) (Max) @ Id
- 4V @ 4mA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 100mOhm @ 17.5A, 10V
- Series
- HiPerFET™
- Power Dissipation (Max)
- 300W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-204AE
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 200nC @ 10V
Company Profile
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