ISP650P06NMXTSA1

Transistors - FETs, MOSFETs - Single

Manufacturer No:
ISP650P06NMXTSA1
Manufacture:
Infineon Technologies
Package:
TO-261-4, TO-261AA
Datasheet:
ISP650P06NMXTSA1
Description:
MOSFET P-CH 60V SOT223-4

In Stock

0 pcs On sales

$0.62

Product Parameter

Vgs(th) (Max) @ Id
4V @ 1.037mA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
65mOhm @ 3.7A, 10V
Power Dissipation (Max)
1.8W (Ta), 4.2W (Tc)
Series
OptiMOS™
Supplier Device Package
PG-SOT223-4
FET Type
P-Channel
Gate Charge (Qg) (Max) @ Vgs
39nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
60V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
1600pF @ 30V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
3.7A (Ta)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA

Company Profile

Atlaschip is a globally authorized distributor of semiconductors and electronic components ,IC ,COF/ TAB ,Opencell for over 600 industry-leading manufacturer brands. a key resource for design engineers. We are guides innovation forward for the global leading technology manufacturers and service providers.

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MOSFET P-CH 60V SOT223-4