GP2M002A060HG

Transistors - FETs, MOSFETs - Single

Manufacturer No:
GP2M002A060HG
Manufacture:
Global Power Technologies Group
Package:
TO-220-3
Datasheet:
GP2M002A060HG
Description:
MOSFET N-CH 600V 2A TO220

In Stock

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Product Parameter

Series
-
Power Dissipation (Max)
52.1W (Tc)
FET Type
N-Channel
Supplier Device Package
TO-220
Packaging
Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs
9nC @ 10V
Vgs (Max)
±30V
Drain to Source Voltage (Vdss)
600V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
360pF @ 25V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
2A (Tc)
Part Status
Obsolete
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Through Hole
Package / Case
TO-220-3
Vgs(th) (Max) @ Id
5V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
4Ohm @ 1A, 10V

Company Profile

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