SQD19P06-60L_GE3

Transistors - FETs, MOSFETs - Single

Manufacturer No:
SQD19P06-60L_GE3
Manufacture:
Vishay / Siliconix
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet:
SQD19P06-60L_GE3
Description:
MOSFET P-CH 60V 20A TO252

In Stock

7751 pcs On sales

$0

Product Parameter

Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id
2.5V @ 250µA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
55mOhm @ 19A, 10V
Series
Automotive, AEC-Q101, TrenchFET®
Power Dissipation (Max)
46W (Tc)
FET Type
P-Channel
Gate Charge (Qg) (Max) @ Vgs
41nC @ 10V
Packaging
Digi-Reel®
Drain to Source Voltage (Vdss)
60V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1490pF @ 25V
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Part Status
Active

Company Profile

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