SI8416DB-T2-E1
Transistors - FETs, MOSFETs - Single
- Manufacturer No:
- SI8416DB-T2-E1
- Manufacture:
- Vishay / Siliconix
- Package:
- 6-UFBGA
- Datasheet:
- SI8416DB-T2-E1
- Description:
- MOSFET N-CH 8V 16A MICRO
In Stock
2990 pcs On sales
$0.7
Product Parameter
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1470pF @ 4V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 16A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 1.2V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- 6-UFBGA
- Vgs(th) (Max) @ Id
- 800mV @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 23mOhm @ 1.5A, 4.5V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 2.77W (Ta), 13W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- 6-Micro Foot™ (1.5x1)
- Packaging
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs
- 26nC @ 4.5V
- Vgs (Max)
- ±5V
- Drain to Source Voltage (Vdss)
- 8V
Company Profile
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