SI5915BDC-T1-E3
Transistors - FETs, MOSFETs - Arrays
- Manufacturer No:
- SI5915BDC-T1-E3
- Manufacture:
- Vishay / Siliconix
- Package:
- 8-SMD, Flat Lead
- Datasheet:
- SI5915BDC-T1-E3
- Description:
- MOSFET 2P-CH 8V 4A 1206-8
In Stock
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Product Parameter
- FET Type
- 2 P-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs
- 14nC @ 8V
- Packaging
- Tape & Reel (TR)
- Drain to Source Voltage (Vdss)
- 8V
- FET Feature
- Logic Level Gate
- Input Capacitance (Ciss) (Max) @ Vds
- 420pF @ 4V
- Part Status
- Obsolete
- Current - Continuous Drain (Id) @ 25°C
- 4A
- Power - Max
- 3.1W
- Mounting Type
- Surface Mount
- Package / Case
- 8-SMD, Flat Lead
- Base Part Number
- SI5915
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 70mOhm @ 3.3A, 4.5V
- Series
- TrenchFET®
- Supplier Device Package
- 1206-8 ChipFET™
Company Profile
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