SI4778DY-T1-E3

Transistors - FETs, MOSFETs - Single

Manufacturer No:: SI4778DY-T1-E3
Manufacture:: Vishay / Siliconix
Package:: 8-SOIC (0.154", 3.90mm Width)
Datasheet:: SI4778DY-T1-E3
Description:: MOSFET N-CH 25V 8A 8-SOIC

In Stock

2494 pcs On sales

Product Parameter

Mounting Type: Surface Mount

Package / Case: 8-SOIC (0.154", 3.90mm Width)

Vgs(th) (Max) @ Id: 2.2V @ 250µA

Operating Temperature: -55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V

Series: TrenchFET®

Power Dissipation (Max): 2.4W (Ta), 5W (Tc)

FET Type: N-Channel

Supplier Device Package: 8-SO

Packaging: Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V

Vgs (Max): ±16V

Drain to Source Voltage (Vdss): 25V

Technology: MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V

FET Feature: -

Current - Continuous Drain (Id) @ 25°C: 8A (Tc)

Part Status: Obsolete

Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

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