SI4776DY-T1-GE3

Transistors - FETs, MOSFETs - Single

Manufacturer No:: SI4776DY-T1-GE3
Manufacture:: Vishay / Siliconix
Package:: 8-SOIC (0.154", 3.90mm Width)
Datasheet:: SI4776DY-T1-GE3
Description:: MOSFET N-CHANNEL 30V 11.9A 8SO

In Stock

7380 pcs On sales

$0.61

Product Parameter

Package / Case: 8-SOIC (0.154", 3.90mm Width)

Vgs(th) (Max) @ Id: 2.3V @ 1mA

Operating Temperature: -55°C ~ 150°C (TA)

Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V

Series: SkyFET®, TrenchFET®

Power Dissipation (Max): 4.1W (Tc)

FET Type: N-Channel

Supplier Device Package: 8-SO

Packaging: Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V

Vgs (Max): ±20V

Drain to Source Voltage (Vdss): 30V

Technology: MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds: 521pF @ 15V

FET Feature: -

Current - Continuous Drain (Id) @ 25°C: 11.9A (Tc)

Part Status: Obsolete

Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Mounting Type: Surface Mount

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