SI3421DV-T1-GE3
Transistors - FETs, MOSFETs - Single
- Manufacturer No:
- SI3421DV-T1-GE3
- Manufacture:
- Vishay / Siliconix
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
- SI3421DV-T1-GE3
- Description:
- MOSFET P-CH 30V 8A TSOP-6
In Stock
11983 pcs On sales
$0
Product Parameter
- Series
- TrenchFET®
- Rds On (Max) @ Id, Vgs
- 19.2mOhm @ 7A, 10V
- FET Type
- P-Channel
- Power Dissipation (Max)
- 2W (Ta), 4.2W (Tc)
- Packaging
- Digi-Reel®
- Supplier Device Package
- 6-TSOP
- Vgs (Max)
- ±20V
- Gate Charge (Qg) (Max) @ Vgs
- 69nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 30V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 2580pF @ 15V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 8A (Tc)
- Mounting Type
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Base Part Number
- SI3421
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
Company Profile
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