SI1058X-T1-E3
Transistors - FETs, MOSFETs - Single
- Manufacturer No:
- SI1058X-T1-E3
- Manufacture:
- Vishay / Siliconix
- Package:
- SOT-563, SOT-666
- Datasheet:
- SI1058X-T1-E3
- Description:
- MOSFET N-CH 20V 1.3A SOT563F
In Stock
0 pcs On sales
$0
Product Parameter
- Package / Case
- SOT-563, SOT-666
- Vgs(th) (Max) @ Id
- 1.55V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 91mOhm @ 1.3A, 4.5V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 236mW (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- SC-89-6
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 5.9nC @ 5V
- Vgs (Max)
- ±12V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 380pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- -
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 4.5V
- Mounting Type
- Surface Mount
Company Profile
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