TPH1R712MD,L1Q

Transistors - FETs, MOSFETs - Single

Manufacturer No:
TPH1R712MD,L1Q
Manufacture:
Toshiba Semiconductor and Storage
Package:
8-PowerVDFN
Datasheet:
TPH1R712MD,L1Q
Description:
MOSFET P-CH 20V 60A 8SOP ADV

In Stock

2887 pcs On sales

$0

Product Parameter

FET Type
P-Channel
Supplier Device Package
8-SOP Advance (5x5)
Packaging
Digi-Reel®
Gate Charge (Qg) (Max) @ Vgs
182nC @ 5V
Vgs (Max)
±12V
Drain to Source Voltage (Vdss)
20V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
10900pF @ 10V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Vgs(th) (Max) @ Id
1.2V @ 1mA
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
1.7mOhm @ 30A, 4.5V
Series
U-MOSVI
Power Dissipation (Max)
78W (Tc)

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