TJ10S04M3L(T6L1,NQ

Transistors - FETs, MOSFETs - Single

Manufacturer No:: TJ10S04M3L(T6L1,NQ
Manufacture:: Toshiba Semiconductor and Storage
Package:: TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet:: TJ10S04M3L(T6L1,NQ
Description:: MOSFET P-CH 40V 10A DPAK-3

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$0.49

Product Parameter

FET Type: P-Channel

Supplier Device Package: DPAK+

Packaging: Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V

Vgs (Max): +10V, -20V

Drain to Source Voltage (Vdss): 40V

Technology: MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 10V

FET Feature: -

Current - Continuous Drain (Id) @ 25°C: 10A (Ta)

Part Status: Active

Drive Voltage (Max Rds On, Min Rds On): 6V, 10V

Mounting Type: Surface Mount

Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id: 3V @ 1mA

Operating Temperature: 175°C (TJ)

Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V

Series: U-MOSVI

Power Dissipation (Max): 27W (Tc)

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